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Torch High Current/Fast Switching/low switching losses IGBT Transistor
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Torch High Current/Fast Switching/low switching losses IGBT Transistor

Torch High Current/Fast Switching/low switching losses IGBT Transistor

Product Overview
IGBTs are fully controlled, voltage-driven power semiconductor devices that combine a BJT and a MOSFET structure. They feature high input impedance and a low on-state voltage drop, offering excellent switching performance and efficiency. Widely used in servo drives, frequency converters, variable-frequency home appliances, photovoltaic inverters, welding equipment, UPS systems, and on-board chargers, IGBTs provide reliable power conversion solutions for a broad range of applications.

 

Our IGBT product portfolio covers multiple series with voltage ratings from 650V to 1700V and current ratings from 5A to 200A. The high-efficiency series, developed with Trench Field Stop technology, Ultra-Thin Wafer Process, and localized lifetime control, achieves higher power density, improved thermal tolerance, enhanced conversion efficiency, and extended service life.

  • Voltage :

    650V to 1700V

Product Introduction

 

 

IGBTs are fully controlled, voltage-driven, composite power semiconductor devices composed of a BJT and a MOSFET. They combine the advantages of high input impedance and low on-state voltage drop. They are widely used in servo motors, frequency converters, variable-frequency home appliances, photovoltaic inverters, welding machines, UPSs, on-board charging stations, and other applications.

 

IGBT products cover multiple series with voltage grades ranging from 650V to 1700V. They offer a wide range of specifications with currents ranging from 5A to 200A. The high-efficiency series, based on Trench Field Stop technology, incorporates the Ultra Thin Wafer Process and localized lifespan control technologies to significantly increase device power density, enabling higher operating temperature tolerance, greater conversion efficiency, and longer lifespan.

 

Operating Principle

 

An IGBT is a fully controlled, voltage-driven power device that combines a MOSFET and a BJT. Its core structure consists of four semiconductor layers (P+/N-/P/N+). The gate voltage controls the formation of a conductive channel. When a positive voltage is applied to the gate, a channel forms in the MOSFET portion,

allowing electrons to inject into the N+ drift region and simultaneously triggering the PNP transistor to conduct, generating a large current. When the device is turned off, the gate voltage decreases,

the channel disappears, electron injection ceases, and holes in the drift region gradually recombine to eliminate, blocking the current.

 

IGBTs combine the high input impedance and fast switching characteristics of MOSFETs with the low on-state voltage drop of BJTs. During conduction, they reduce current and losses through the conductivity modulation effect. Their operation is gate voltage-dependent, with positive voltage turning them on and zero or negative voltage turning them off. They exhibit unidirectional conductivity. IGBTs are widely used in power electronics applications such as inverters, motor control, and new energy, serving as core components for efficient power conversion.

 

Product Features

 

Excellent on-state voltage drop and low switching losses

Strong short-circuit capability enables higher power density

 

 

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Torch IGBT
Torch High Current/Fast Switching/low switching losses IGBT Transistor

Product Overview IGBTs are fully controlled, voltage-driven power semiconductor devices that combine a BJT and a MOSFET structure. They feature high input impedance and a low on-state voltage drop, offering excellent switching performance and efficiency. Widely used in servo drives, frequency converters, variable-frequency home appliances, photovoltaic inverters, welding equipment, UPS systems, and on-board chargers, IGBTs provide reliable power conversion solutions for a broad range of applications.   Our IGBT product portfolio covers multiple series with voltage ratings from 650V to 1700V and current ratings from 5A to 200A. The high-efficiency series, developed with Trench Field Stop technology, Ultra-Thin Wafer Process, and localized lifetime control, achieves higher power density, improved thermal tolerance, enhanced conversion efficiency, and extended service life.

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