Torch Capacitor High Voltage 650V to 1200V SiC MOSFET for EV Industrial Inverter

Product Introduction

As a third-generation SiC MOSFET series product, it covers voltage grades from 650V to 1700V and is widely used in high-end server power supplies, photovoltaic inverters, motor drives, UPS power supplies, and new energy vehicle charging stations.

Operating Principle

The SiC MOSFET utilizes a vertical conductive structure, with a core consisting of a source (current input), a gate (control terminal), a drain (current output), and a low-doped drift layer (responsible for high-voltage blocking).

When conducting, a positive voltage is applied to the gate, forming an N-type conductive channel on the surface of the P-type body region. Electrons are injected from the source through the channel into the drift layer, enabling current flow. When off, the gate voltage drops below the threshold, eliminating the conductive channel and blocking the drain–source current. Remaining carriers complete the shutdown process by recombination or sweeping out of the depletion region.

Product Features

High breakdown voltage, high current density

Extremely low switching losses, maximum operating junction temperature of 175°C

Selection Example

Specification